Complete works of Herbert C. Kerkow (16)

1. 1972 Photon emission during bombardment of solids with alkali ions in the energy range between 2 and 10 keV · Physica Status Solidi (a)
2. 1979 Enhancements of Xe(M)-radiation during channelling of Xe-ions in copper crystals · Radiation Effects
3. 1979 Measurement of the thickness of thin layers by proton- induced X-ray emission · Thin Solid Films
4. 1980 A new experimental method to determine damage profiles by Rutherford backscattering · Physica Status Solidi (a)
5. 1980 Comparative measurements of proton dechanneling in silicon under channeling, blocking and double alignment conditions · Radiation Effects this record
6. 1980 Depth profile measurements of copper in silicon by ion-induced x-ray emission · Radiation Effects
7. 1981 Ion-induced X-ray measurements of proton dechanneling in silicon covered with amorphous layers · Radiation Effects
8. 1983 Calorimetric determination of the formation energy for an amorphous layer on a crystalline silicon substrate · Physica Status Solidi (a)
9. 1983 Kinetics of furnace annealing of As-implanted silicon · Physica Status Solidi (a)
10. 1983 Proton-induced L-shell X-ray emission cross-sections of elements with 24 ≦Z2 ≦ 50 for projectile energies between 30 and 350 keV · Physica Status Solidi (a)
11. 1984 Investigation of ion-implanted semiconductors by ellipsometry and backscattering spectrometry · Thin Solid Films
12. 1984 The influence of foreigen atoms on the epitaxial annealing of ion-implanted silicon · Physica Status Solidi (a)
13. 1986 Anomalous Diffusion of Boron in Silicon Due to Heavy Ion Bombardment · physica status solidi (a)
14. 1986 Flux Dependence of Damage Accumulation in Silicon during Ion Bombardment · physica status solidi (a)
15. 1986 Ion-beam-assisted annealing of amorphized silicon · physica status solidi (a)
16. 1987 Rate Effects during Radiation-Enhanced Diffusion of Boron in Silicon · Physica Status Solidi (a)